Clusters of impurity nickel atoms and their migration in the crystal lattice of silicon

The formation of clusters impurity atoms in the crystal lattice semiconductor materials is great interest. nanoclusters with controlled parameters can serve as basis for technology creating and obtaining bulk nanostructured material. This paper shows experimental results obtained, well proposed physical model structure nickel atomic clusters. It shown that move migrate monosilicon an anomalously high diffusion coefficient about c (D ~ 10–9 cm2/s at T = 800°C). structural composition determined, its mechanism migration are proposed. Thus, it was found possible to control state atom silicon lattice, a new type unique functional properties using cluster process. makes create class photonic superlattices based on semiconductors ordered clusters, which has functionality optoelectronic, nanoelectronic, photoelectric devices sensors quantities generation.